Two-dimensional Numerical Optimization of Mis Solar Cell on N-type Silicon

The studies on metal oxides and mixed system have shown, that some of them form a negative fixed charge at the interface when deposited on silicon substrate. After deposition of dielectric layers with negative fixed charge on p-type silicon substrate an inversion layer is formed, leading to a back surface field for the minority carriers and thereby reducing the surface recombination velocity. The experiments with metal-insulatorsemiconductor solar cells on n-type silicon, using (Al2O3)x(TiO2)1-x as a dielectric with a negative fixed charge are under way. In this paper, our two-dimensional device simulator MINIMOS-NT is applied for the optimization of these novel devices. The impact of various cell parameters, such as the spacing between the contact metal fingers, the substrate resistivity, and the negative fixed charge density) on the cell’s current-voltage (I-V) characteristics is investigated.